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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors MJ15002 DESCRIPTION With TO-3 package Complement to type MJ15001 Excellent safe operating area APPLICATIONS For high power audio,disk head positioners and other linear applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IB IE PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage INC Emitter-base voltage Collector current E SEM ANG H Open base TC=25ae Open emitter OND IC CONDITIONS TOR UC VALUE -140 -140 -5 -15 -5 20 250 200 -65~200 UNIT V V V A A A W ae ae Open collector Base current Emitter current Total power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.875 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN MJ15002 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;IB=0 -140 V VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.0 V VBE Base-emitter on voltage IC=-4A ; VCE=-2V -2.0 V ICEO Collector cut-off current VCE=-140V; IB=0 VCE=-140V; VBE(off)=-1.5V TC=150ae VEB=-5V; IC=0 -0.25 -0.1 -2.0 -0.1 mA ICEX Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC current gain IC=-4A ; VCE=-2V Is/b Second breakdown collector current With base forward biased VCE=-40Vdc,t=1 s, Nonrepetitive COB fT INC Output capacitance ES ANG H VCE=-100Vdc,t=1 s, Nonrepetitive MIC E OND TOR UC 25 150 -5 -0.5 1000 A IE=0 ; VCB=-10V;f=1.0MHz pF Transition frequency IC=-0.5A ; VCE=-10V;f=0.5MHz 2 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE MJ15002 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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